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Insulated Gate Bipolar Transistor IGBT Theory and Design Vinod Kumar Khanna (Central Electronics Engineering Research Institute, Pilani, India)

Insulated Gate Bipolar Transistor IGBT Theory and Design By Vinod Kumar Khanna (Central Electronics Engineering Research Institute, Pilani, India)

Insulated Gate Bipolar Transistor IGBT Theory and Design by Vinod Kumar Khanna (Central Electronics Engineering Research Institute, Pilani, India)

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Summary

A comprehensive and state-of-the-art coverage of the design and fabrication of IGBT. * All-in-one resource* Explains the fundamentals of MOS and bipolar physics. * Covers IGBT operation, device and process design, power modules, and new IGBT structures. .

Insulated Gate Bipolar Transistor IGBT Theory and Design Summary

Insulated Gate Bipolar Transistor IGBT Theory and Design by Vinod Kumar Khanna (Central Electronics Engineering Research Institute, Pilani, India)

A comprehensive and state-of-the-art coverage of the design and fabrication of IGBT.
  • All-in-one resource
  • Explains the fundamentals of MOS and bipolar physics.
  • Covers IGBT operation, device and process design, power modules, and new IGBT structures.

About Vinod Kumar Khanna (Central Electronics Engineering Research Institute, Pilani, India)

VINOD KUMAR KHANNA, PhD, is a senior scientist working in the solid-state devices division of Central Electronics Engineering Research Institute in Pilani, India. He has been extensively involved for more than twenty years in device, process design and fabrication of power semiconductor devices. He received his PhD in Physics from Kurukshetra University in 1988. A Fellow of the Institution of Electronics and Telecommunication Engineers and a lifetime member of several scientific and professional organizations, Dr. Khanna has published over thirty research papers in international journals and conference proceedings and written two previous books entitled, Handbook of Electrical & Electronics Engineering Fundamentals, and Digital Signal Processing, Telecommunications & Multimedia Technology.

Table of Contents

Preface.

Power Device Evolution and the Advert of IGBT.

IGBT Fundamentals and Status Review.

MOS Components of IGBT.

Bipolar Components of IGBT.

Physics and Modeling of IGBT.

Latch-Up of Parasitic Thyristor in IGBT.

Design Considerations of IGBT Unit Cell.

IGBT Process Design and Fabrication Technology.

Power IGBT Modules.

Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies.

IGBT Circuit Applications.

Index.

Additional information

NPB9780471238454
9780471238454
0471238457
Insulated Gate Bipolar Transistor IGBT Theory and Design by Vinod Kumar Khanna (Central Electronics Engineering Research Institute, Pilani, India)
Vinod Kumar Khanna (Central Electronics Engineering Research Institute, Pilani, India)
New
Hardback
John Wiley & Sons Inc
2003-09-05
648
N/A
Book picture is for illustrative purposes only, actual binding, cover or edition may vary.
This is a new book - be the first to read this copy. With untouched pages and a perfect binding, your brand new copy is ready to be opened for the first time

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