Preface.-1. Introduction (20 pages): General materials properties (polymorphs, bandgap, device application etc) (Roberto Fornari, Univ. of Parma, Italy).-Part I: Bulk growth (40 pages).-2. Czochralski (CZ) (Zbigniew Galazka, IKZ Berlin, Germany).-3. Edge-defined film-fed growth (EFG) (Akito Kuramata, Tamura Corp., Japan).-4. Vertical Bridgman (Keigo Hoshikawa, Shinshu Univ., Japan).-5. Wafer manufacturing (Akito Kuramata, Tamura Corp., Japan).-Part II: Epitaxial growth (110 pages).-6. Plasma-assisted MBE (Growth kinetics) (Oliver Bierwagen, Paul Drude Institute Berlin, Germany).-7. Plasma-assisted MBE (Homoepitaxial and heterostructure growth) (Jim Speck, UCSB, USA).-8. Ozone MBE (Debdeep Jena, Cornell Univ., USA).-9 Pulsed laser deposition (PLD) (Akira Ohtomo, Tokyo Institute of Technology, Japan).-10. Homoepitaxial growth of -Ga2O3 thin films on -Ga2O3 substrates (Michele Baldini, IKZ Berlin, Germany).-11. Heteroepitaxial growth of -Ga2O3 on sapphire substrates (Roberto Fornari, Univ. of Parma, Italy).-12. Homoepitaxial growth of -Ga2O3 thin films on -Ga2O3 substrates (Yoshinao Kumagai, Tokyo Univ. of Agriculture and Technology, Japan).-13. Heteroepitaxial growth of -Ga2O3 and -Ga2O3 on sapphire substrates (Yuichi Oshima, NIMS, Japan).-14. -Ga2O3 (Shizuo Fujita, Kyoto Univ., Japan).-15. -Ga2O3 (Hiroyuki Nishinaka, Kyoto Institute of Technology, Japan).-16. Low-pressure Chemical Vapor Deposition (Hongping Zhao, Ohio State Univ., USA).-Part III: Materials properties (120 pages).-17. Theoretical DFB calculation 1 (Chris G. Van de Walle, UCSB, USA).-18. Theoretical DFB calculation 2 (Joel Varley, Lawrence Livermore National Laboratory, USA).-19. Optical properties (Takeyoshi Onuma, Kogakuin Univ., Japan).-20. Phonon properties (Mathias Schubert, Univ. of Nebraska, Lincoln, USA).-21. Thermal properties (Tengfei Luo,Univ. of Notre Dame and/or Debdeep Jena, Cornell Univ. USA).-22. Structural properties (TEM, X-ray topography) (Osamu Ueda, Kanazawa Institute of Technology and/or Hirotaka Yamaguchi, AIST, Japan).-23. Electrical properties (Electron mobility and velocity) (Uttam Singisetti, Univ. at Buffalo, The State Univ. of New York, USA).-24. Electrical properties (Leakage current of EFG bulk) (Makoto Kasu, Saga Univ., Japan).-25. Annealing effects on electrical properties (Takayoshi Oshima, Saga Univ., Japan).-26. Vacancy defects by positron annihilation spectroscopy (Filip Tuomisto, Helsinki University of Technology, Finland).-27. Deep-level traps (Steve Ringel, Ohio State Univ., USA).-28. Scintillation properties (Takayuki Yanagida, Nara Institute of Science and Technology, Japan).-Part IV: Devices (110 pages).-29. Transistors for wireless applications (Gregg Jessen, Air Force Research Lab., USA).-30. Transistors for power and radiation-hard electronics (Man Hoi Wong, NICT, Japan).-31. (AlGa)2O3/Ga2O3 HEMT (Siddharth Rajan, Ohio State Univ., USA).-32. Nano-membrane Ga2O3 FET (Peide Ye, Purdue Univ., USA).-33, Amorphous Ga2O3 TFT (Junghwan Kim, Tokyo Institute of Technology, Japan).-34. Vertical Schottky barrier diodes on native substrates (Masataka Higashiwaki, NICT, Japan).-35. Free-standing -Ga2O3 Schottky barrier diodes (T. Shinohe, FLOSFIA, Japan).-36. Schottky and n-Ga2O3/p-oxide semiconductor hetero bipolar diodes (Marius Grundmann, Univ. of Leipzig, Germany).-37. UV photodiodes (Dong-Sing Wuu, National Chung Hsing Univ., Taiwan).-38. High-power InGaN LEDs on Ga2O3 substrates (Akito Kuramata, Tamura Corp., Japan).-40. Image sensor (Keitada Mineo, Japan Broadcasting Corp., Japan).-Index.
